Fe-doped InN layers grown by molecular beam epitaxy

分类： 物理学 >> 凝聚态:结构、力学和热性能 提交时间： 2017-03-26

Xinqiang Wang Shitao Liu Dingyu Ma Xiantong Zheng Guang Chen Fujun Xu Ning Tang Bo Shen Peng Zhang Xingzhong Cao Baoyi Wang Sen Huang Kevin J. Chen Shengqiang Zhou AkihikoYoshikawa

摘要： Iron(Fe)-doped InN (InN:Fe) layers have been grown by molecular beam epitaxy. Unlike Fe in GaN, the Fe is found to be donor-like in InN. However, the Fe-concentrations ([Fe]) can’t fully explain the drastic increase of residual electron concentration. Further analysis shows that more unintentionally doped impurities such as hydrogen and oxygen are incorporated with increasing [Fe] and the sample surface is degraded with a large number of pits, which probably are the main reasons for electron generation and mobility reduction. Photoluminescence of InN is also gradually quenched by Fe-doping. This work shows that Fe-doping is one of good choices to control electron density in InN

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